The Electronics Science and Technology Division of the U.S. Naval Research Laboratory has an opportunity for Ph.D.-level device physicist, to support ongoing experimental work on semiconductor device research and development. This is an exciting opportunity to conduct research, engage with world-class experts, develop new applications, and engage with an award-winning team of scientists and engineers dedicated to the mission of the U.S. Navy.
- Perform experimental work to support the Electronics Science and Technology Division at the U.S. Naval Research Laboratory. The incumbent will fabricate device hetero-structures based on two-dimensional materials such as topological insulators or transition metal dichalcogenides using various micro-fabrication and lithographic techniques. The incumbent will perform optical, structural and electrical characterization of the base materials and device structures; the optical measurements will include temperature-dependent Raman and photo-luminescence micro-spectroscopy. Structural measurements will include atomic force microscopy, and electrical characterization includes temperature-dependent magneto-transport.
- Doctoral degree (Ph.D.) completed, in Physics, Materials Science/Engineering, or a related field, with specialization in semiconductor device research.
- Minimum of 4 years experience
- Must have demonstrated familiarity with advanced experimental techniques, including standard semiconductor device characterization techniques.
- Must have demonstrated capabilities for data collection and processing. Must be able to conduct research independently, with minimal supervision, and to work with colleagues in a team setting.
- Must be able to prepare and present reports that summarize significant results for colleagues.
- It is preferred that the candidate be familiar with facilities for epitaxial growth, electronic transport measurement, magneto-optical studies, structural/magnetic characterization, electron-beam and photo-lithography.
- Demonstrated experience with two-dimensional materials such as transition metal dichalcogenides or topological insulators is also preferred, along with demonstrated experience with optical (Raman, photoluminescence), structural (atomic force microscopy) and transport characterization of two-dimensional materials, and fabrication of device heterostructures from these materials.
External Referral Bonus:Eligible
Potential for Telework:No
Clearance Level Required:None
Scheduled Weekly Hours:40
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